SILICON PHOTODIODES

SMD package

Surface mount photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm

PD Series	Active area	φ	Photo current	Rise time	Size	Note	Data sheet
SPD19-C	0,19 mm²	80°	6 µA	6 ns	3 x 2 x 1.1 mm		request
SPD19-CT	0,19 mm²	80°	6 µA	6 ns	3.5 x 2.7 x 1.8 mm	SMT type	request

Epoxy package

Silicon Pin-photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: 3 mm, 5 mm

PD Series	Active area	φ	Photo current	Rise time	Package	Note	Data sheet
SPD19-33	0.19 mm²	50°	12 µA	6 ns	3 mm		request
SPD64-01	0.64 mm²	30°	20 µA	10 ns	5 mm		request
SPD64-02	0.64 mm²	28°	20 µA	10 ns	5 mm		request
SPD64-02B	0.64 mm²	28°	18 µA	10 ns	5 mm	visible light cutoff	request
SPD64-03	0.64 mm²	40°	20 µA	10 ns	5 mm		request
SPD64-04	0.64 mm²	90°	20 µA	10 ns	5 mm		request
SPD64-04B	0.64 mm²	90°	18 µA	10 ns	5 mm	visible light cutoff	request
SPD64-06	0.64 mm²	24°	20 µA	10 ns	5 mm		request

TO package

Silicon Pin-photodiodes, featuring excellent responsibility and high photocurrent.
Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: TO-18, TO-39, TO-46

PD Series	Active area	φ	Photo current	Rise time	Package	Note	Data sheet
SPD17-0F	1,69 mm²	110°	25 µA	10 ns	TO-46		request
SPD17-3F	1,69 mm²	30°	40 µA	10 ns	TO-46		request
SPD17-5F	1,69 mm²	36°	14 µA	10 ns	TO-46		request
SPD17-0T	1,69 mm²	120°	20 µA	10 ns	TO-18		request
SPD17-3T	1,69 mm²	20°	55 µA	10 ns	TO-18		request
SPD17-5T	1,69 mm²	90°	15 µA	10 ns	TO-18		request
SPD26-0T	2,56 mm²	120°	30 µA	30 ns	TO-18		request
SPD26-3T	2,56 mm²	20°	45 µA	30 ns	TO-18		request
SPD26-5T	2,56 mm²	90°	15 µA	30 ns	TO-18		request
SPD400-0F	4 mm²	120°	50 µA	45 ns	TO-46		request
SPD400-3F	4 mm²	60°	40 µA	45 ns	TO-46		request
SPD784-0P	7,84 mm²	130°	100 µA	50 ns	TO-39		request
SPD784-9P	7,84 mm²	100°	80 µA	50 ns	TO-39		request
SPD900-0P	9 mm²	130°	130 µA	300 ns	TO-39		request
SPD900-9P	9 mm²	100°	110 µA	300 ns	TO-39

PDs with integrated transimpedance amplifier

PIN silicon photodiodes with integrated low noise JFET TI amplifier, integrated feedback resistor and capacitor, wavelength range 400 - 1100nm, spectral responsivity peak at 850 nm, hermetical sealed TO-5 package with collimating glass lens, very low offset and drift parameters, dual supply voltage +/-5V up to +/-18V, operating temp.: -25° .. +85°C, RoHS and WEEE conformity

IQ Series	Active area	φ	Transimpendance	Rise time	Bandwidth	Note	Data sheet
IQ800L	4.8 mm²	100°	100 MOhm	35 µs	10 kHz
IQ801L	4.8 mm²	100°	10 MOhm	15 µs	25 kHz
IQ802L	4.8 mm²	100°	1 MOhm	3 µs	120 kHz

Phototransistors

Range of Sensivity: 400 - 1100 nm, peak @ 900 nm
Package size: SMD, 3 mm, 5 mm

PT Series	Active area	φ	Photo current	Rise time	Package	Note	Data sheet
SPT36-C	0,36 mm²	80°	3 mA	20 µs	SMD	3 x 2 x 1.1 mm	request
SPT36-05	0.36 mm²	80°	4 mA	20 µs	5 mm flat epoxy	Peak at 900 nm	request
SPD36-33	0.36 mm²	50°	7 mA	20 µs	3 mm epoxy	Peak at 900 nm	request
SPT64-05	0.64 mm²	80°	5 mA	8 µs	5 mm flat epoxy	Peak at 900 nm	request
SPT64-33	0.64 mm²	50°	10 mA	8 µs	3 mm epoxy	Peak at 900 nm	request